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NTE2986 Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +175C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C Mounting Torque, 6-32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbf*in (1.1 N*m) Thermal Resistance: Maximum Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W Typical Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction-to-Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . . 62K/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 179H, VDD = 25V, RG = 25, IAS = 51A, Starting TJ = +175C. Note 3. ISD 51A, di/dt 250A/s, VDD V(BR)DSS, TJ +175C.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source ON Resistance Symbol BVDSS Test Conditions VGS = 0v, ID = 250A Min 60 Typ - 0.07 - - - - - - - - - - - 17 230 42 110 4.5 7.5 3300 1200 200 Max - Unit V
V(BR)DSS/ Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 51A, VGS = 0V, Note 4 TJ = +25C, IF = 51A, di/dt = 100A/s, Note 4 Between lead, 6mm (0.25") from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz VDD = 30V, ID = 51A, RG = 4.6, RD = 0.56 VGS = 5V, ID = 31A, Note 4 VGS = 4V, ID = 25A, Note 4 VDS = VGS, ID = 250A VDS 25V, ID = 31A, Note 4 VDS = 60V, VGS = 0 VDS = 48V, VGS = 0V, , TC = +150C VGS = 10V VGS = -10V VGS = 5V, ID = 51A, VDS = 48V
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- - 1.0 23 - - - - - - - - - - - - - - - -
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0.028 0.039 2.0 - 25 250 100 -100 66 12 43 - - - - - - - - -
V/C
V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current
Gate-Source Leakage Forward Gate-Source Leakage Reverse Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time - - - - - - - - 130 0.84 50 200 2.5 180 1.3 A A V ns C
Intrinsic turn-on time is neglegible (turn-on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab

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